STAP85025S Datasheet, PDF (1/13 Pages) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

STAP85025S
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Datasheet - production data
STAP1
Figure 1. Pin connection
Drain
Description
The STAP85025S is a common source N-
channel, enhancement-mode lateral field-effect
RF power transistor. It is designed for high gain,
broadband commercial and industrial
applications. It operates at 13.6 V in common
source mode at a frequency up to 1 GHz. The
STAP85025S boasts the excellent gain, linearity
and reliability of ST’s latest LDMOS technology
mounted in STAP® ST advanced PowerSO-10
RF package. The STAP85025S superior linearity
performance makes it an ideal solution for the car
mobile radio.
The STAP® ST plastic package has been
designed to offer high reliability and high power
capability. It has been specially optimized for RF
needs and offers excellent RF performance and
ease of assembly.
Gate
Source
Features
• Excellent thermal stability
• Common source configuration
• P_OUT = 25 W with 15.7 dB gain @ 870 MHz /
13.6 V
• Plastic package
• ESD protection
• In compliance with the 2002/95/EC European
directive
Table 1. Device summary
Order code
Marking
Package
STAP85025S
STAP85025S
STAP1
Packing
Tube
December 2015
This is information on a product in full production.
DocID15795 Rev 5
1/13
www.st.com