STM32F205VCT6TR Datasheet, PDF (75/178 Pages) STMicroelectronics – ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/128+4KB RAM

STM32F20xxx
Electrical characteristics
6.3.6
Table 19. Embedded reset and power control block characteristics (continued)
Symbol
Parameter
Conditions
Min Typ Max Unit
V_BOR2
Brownout level 2
threshold
Falling edge
Rising edge
2.44 2.50 2.56 V
2.53 2.59 2.63 V
V_BOR3
Brownout level 3
threshold
V_BORhyst(1) BOR hysteresis
T_{RSTTEMPO(1)(2)} Reset temporization
I_RUSH(1)
InRush current on
voltage regulator
power-on (POR or
wakeup from Standby)
Falling edge
Rising edge
2.75 2.83 2.88 V
2.85 2.92 2.97
- 100 - mV
0.5 1.5 3.0 ms
- 160 200 mA
InRush energy on
E_RUSH(1)
voltage regulator
power-on (POR or
V_DD = 1.8 V, T_A = 105 °C,
I_RUSH = 171 mA for 31 µs
-
wakeup from Standby)
- 5.4 µC
1. Guaranteed by design, not tested in production.
2.
The reset
when first
temporization is measured from the power-on (POR
instruction is read by the user application code.
reset
or
wakeup
from
V_BAT)
to
the
instant
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 20: Current consumption
measurement scheme.
All Run mode current consumption measurements given in this section are performed using
CoreMark code.
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