STM32F205VCT6TR Datasheet, PDF (169/178 Pages) STMicroelectronics – ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/128+4KB RAM

STM32F20xxx
Revision history
Table 95. Document revision history (continued)
Date
Revision
Changes
22-Apr-2011
Updated Typical and maximum current consumption conditions, as
well as Table 21: Typical and maximum current consumption in Run
mode, code with data processing running from Flash memory (ART
accelerator disabled) and Table 20: Typical and maximum current
consumption in Run mode, code with data processing running from
Flash memory (ART accelerator enabled) or RAM. Added Figure 23,
Figure 24, Figure 25, and Figure 26.
Updated Table 22: Typical and maximum current consumption in Sleep
mode, and added Figure 27 and Figure 28.
Updated Table 23: Typical and maximum current consumptions in Stop
mode. Added Figure 29: Typical current consumption vs temperature
in Stop mode.
Updated Table 24: Typical and maximum current consumptions in
Standby mode and Table 25: Typical and maximum current
consumptions in VBAT mode.
Updated On-chip peripheral current consumption conditions and
Table 26: Peripheral current consumption.
Updated t_WUSTDBY and t_WUSTOP, and added Note 3 in Table 27: Low-
power mode wakeup timings.
Maximum f_{HSE_ext} and minimum t_w(HSE) values updated in Table 28:
High-speed external user clock characteristics.
Updated C and g_m in Table 30: HSE 4-26 MHz oscillator
characteristics. Updated R_F, I₂, g_m, and t_su(LSE) in Table 31: LSE
oscillator characteristics (fLSE = 32.768 kHz).
6
Added Note 1 and updated ACC_HSI, IDD_(HSI, and t_su(HSI) in Table 32:
(continued) ^{HSI oscillator characteristics. Added Figure 34: ACCHSI versus}
temperature.
Updated f_LSI, t_su(LSI) and IDD_(LSI) in Table 33: LSI oscillator
characteristics. Added Figure 35: ACCLSI versus temperature
Table 34: Main PLL characteristics: removed note 1, updated t_LOCK,
jitter, IDD_(PLL) and IDD_A(PLL), added Note 2 for f_{PLL_IN} minimum and
maximum values.
Table 35: PLLI2S (audio PLL) characteristics: removed note 1,
updated t_LOCK, jitter, IDD_(PLLI2S) and IDD_A(PLLI2S), added Note 2 for
f_{PLLI2S_IN} minimum and maximum values.
Added Note 1 in Table 36: SSCG parameters constraint.
Updated Table 37: Flash memory characteristics. Modified Table 38:
Flash memory programming and added Note 2 for t_prog. Updated t_prog
and added Note 1 in Table 39: Flash memory programming with VPP.
Modified Figure 39: Recommended NRST pin protection.
Updated Table 42: EMI characteristics and EMI monitoring conditions
in Section : Electromagnetic Interference (EMI)g. Added Note 2 related
to V_ESD(HBM)in Table 43: ESD absolute maximum ratings.
Updated Table 48: I/O AC characteristics.
Added Section 6.3.15: I/O current injection characteristics.
Modified maximum frequency values and conditions in Table 48: I/O
AC characteristics.
Updated t_res(TIM) in Table 50: Characteristics of TIMx connected to the
APB1 domain. Modified t_res(TIM) and f_EXT Table 51: Characteristics of
TIMx connected to the APB2 domain.
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