STM8L052C6T6 Datasheet, PDF (72/102 Pages) STMicroelectronics – Value Line, 8-bit ultralow power MCU, 32-KB Flash, 256-byte data EEPROM, RTC, LCD, timers, USART, I2C, SPI, ADC

Electrical parameters
STM8L052C6
8.3.5
Memory characteristics
T_A = -40 to 85 °C unless otherwise specified.
Table 32. RAM and hardware registers
Symbol
Parameter
Conditions
Min Typ Max Unit
V_RM
Data retention mode ⁽¹⁾ Halt mode (or Reset) 1.8
V
1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
Flash memory
Table 33. Flash program and data EEPROM memory
Symbol
Parameter
Conditions
Min
Typ
Max
(1)
Unit
V_DD
Operating voltage
(all modes, read/write/erase)
Programming time for 1 or 64 bytes (block)
erase/write cycles (on programmed byte)
t_prog
Programming time for 1 to 64 bytes (block)
write cycles (on erased byte)
I_prog Programming/ erasing consumption
t_RET(2)
Data retention (program memory) after 100
erase/write cycles at T_A= –40 to +85 °C
Data retention (data memory) after 100000
erase/write cycles at T_A= –40 to +85 °C
N_RW ⁽³⁾
Erase/write cycles (program memory)
Erase/write cycles (data memory)
f_SYSCLK = 16 MHz
1.8
3.6 V
6
ms
3
T_A=+25 °C, V_DD = 3.0 V
0.7
T_A=+25 °C, V_DD = 1.8 V
T_RET = +85 °C
30⁽¹⁾
T_RET = +85 °C
30⁽¹⁾
T_A = –40 to +85 °C
100⁽¹⁾
100⁽¹⁾
(4)
ms
mA
years
cycles
kcycles
1. Data based on characterization results, not tested in production.
2. Conforming to JEDEC JESD22a117
3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
addresses a single byte.
4. Data based on characterization performed on the whole data memory.
8.3.6
I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below V_SS or
above V_DD (for standard pins) should be avoided during normal product operation. However,
in order to give an indication of the robustness of the microcontroller in cases when
abnormal injection accidentally happens, susceptibility tests are performed on a sample
basis during device characterization.
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