STDLED625H Datasheet, PDF (7/17 Pages) STMicroelectronics – Gate charge minimized

STDLED625H
Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
AM07179v1
1000
Ciss
Figure 9. Output capacitance stored energy
Eoss
(µJ)
AM07180v1
3.0
2.5
2.0
100
1.5
Coss
1.0
10
Crss
t(s) ¹
0.1
1
10
100 VDS(V)
uc _{Figure 10. Normalized gate threshold voltage vs}
d _temperature
ro _VGS(th)
P _(norm)
te ^1.10
AM07181v1
0.5
0
0 100 200 300 400 500 600 VDS(V)
Figure 11. Normalized on-resistance vs
temperature
RDS(on)
(norm)
AM07182v1
2.5
sole ^1.00
2.0
Ob ^1.5
0.90
) ^- _1.0
t(s 0.80
c ^0.5
du _0.70
ro ^-75
-25
25
75
125
TJ(°C)
-75 -25
25
75
125 TJ(°C)
P _{Figure 12. Maximum avalanche energy vs}
testarting T_j
le_EAS
o_(mJ)
s ₁₂₀
Ob ¹¹⁰
ID=3.8 A
VDD=50 V
AM07184v1
Figure 13. Normalized B_VDSS vs temperature
BVDSS
(norm)
1.10
AM07183v1
100
90
80
1.05
70
60
50
1.00
40
30
0.95
20
10
0
0 20 40 60 80 100 120 140 TJ(°C)
0.90
-75 -25
25
75
125 TJ(°C)
DocID024435 Rev 1
7/17