STDLED625H Datasheet, PDF (3/17 Pages) STMicroelectronics – Gate charge minimized

STDLED625H
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V_DS Drain-source voltage
620
V
V_GS Gate- source voltage
± 30
V
I_D Drain current (continuous) at T_C = 25 °C
4.5
A
I_D Drain current (continuous) at T_C = 100 °C
2.3
A
I_DM ⁽¹⁾ Drain current (pulsed)
) _{PTOT Total dissipation at TC = 25 °C}
ct(s ^IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by T_j max)
du Single pulse avalanche energy
ro ^{EAS (starting T}j ^{= 25°C, I}D ^{= I}AR^{, V}DD ^{= 50V)}
P _{Gate source ESD(HBM-C = 100 pF,}
te ^{VESD(G-S) R = 1.5 kΩ)}
le dv/dt ⁽²⁾ Peak diode recovery voltage slope
18.0
70
3.8
115
2500
12
Obso ^VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
) ^{- Tstg Storage temperature}
t(s ^{Tj Max. operating junction temperature}
- 55 to 150
150
c _{1. Pulse width limited by safe operating area.}
du ^{2. I}SD ^{≤ 3.8 A, di/dt = 400 A/µs, V}DD ^{= 80% V}(BR)DSS^{, V}DS ^{peak ≤ V}(BR)DSS.
Pro Table 3. Thermal data
te^Symbol
Parameter
le_{Rthj-case Thermal resistance junction-case max}
so _Rthj-pcb ⁽¹⁾ _{Thermal resistance junction-pcb max}
Ob ^{1. When mounted on 1inch² FR-4 board, 2 oz Cu.}
Value
1.79
50
A
W
A
mJ
V
V/ns
V
°C
°C
Unit
°C/W
°C/W
DocID024435 Rev 1
3/17