STDLED625H Datasheet, PDF (1/17 Pages) STMicroelectronics – Gate charge minimized

STDLED625H
N-channel 620 V, 1.7 Ω, 4.5 A Power MOSFET
in a DPAK package
Datasheet − preliminary data
Features
Order code
V_DS
R_DS(on)
max
I_D
P_TOT
TAB
t(s) ³
1
uc _DPAK
olete ^Prod Figure 1. Internal schematic diagram
bs D(2,TAB)
roduct(s) ^{- O G(1)}
STDLED625H 620 V
2Ω
4.5 A 70 W
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitance
• Improved diode reverse recovery
characteristics
• Zener-protected
Applications
• LED lighting applications
Description
These Power MOSFETs boast extremely low on-
resistance and very good dv/dt capability,
rendering them suitable for buck-boost and
flyback topologies.
lete ^P S(3)
Obso ^AM01476v1
Order code
STDLED625H
Table 1. Device summary
Marking
Package
LED625H
DPAK
Packaging
Tape and reel
March 2013
DocID024435 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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