STDLED625H Datasheet, PDF (5/17 Pages) STMicroelectronics – Gate charge minimized

STDLED625H
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 3.8 A, V_GS = 0
3.8 A
-
15.2 A
-
1.6 V
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
220
I_SD = 3.8 A, di/dt = 100 A/µs
-
1.4
V_DD = 60 V (see Figure 20)
13
ns
µC
A
t_rr
Reverse recovery time
I_SD = 3.8 A, di/dt = 100 A/µs
270
ns
Q_rr Reverse recovery charge
V_DD = 60 V, T_j = 150 °C
- 1.9
µC
) I_RRM Reverse recovery current
(see Figure 20)
14
A
t(s ^{1. Pulse width limited by safe operating area.}
c _{2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%}
Produ Table 8. Gate-source Zener diode
te ^Symbol
Parameter
Test conditions
ole ^V_(BR)GSO
Gate-source breakdown
voltage
I_GS= ± 1 mA, I_D=0
Min. Typ. Max. Unit
30 -
-V
Obs _{The built-in back-to-back Zener diodes have been specifically designed to enhance not only}
) ^{- the device’s ESD capability, but also to make them capable of safely absorbing any voltage}
t(s ^{transients that may occasionally be applied from gate to source. In this respect, the Zener}
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
Obsolete ^{Produc The integrated Zener diodes thus eliminate the need for external components.}
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