STDLED625H Datasheet, PDF (4/17 Pages) STMicroelectronics – Gate charge minimized

Electrical characteristics
2
Electrical characteristics
STDLED625H
(T_C = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source
breakdown voltage
V_GS = 0, I_D = 1 mA
620
V
V_GS = 0, V_DS = 620V
1 µA
I_DSS
ct(s) I_GSS
du _VGS(th)
Pro R_DS(on
Zero gate voltage
drain current
Gate-body leakage
current
V_GS = 0
V_DS = 620V, T_C=125 °C
V_DS = 0, V_GS = ± 20 V
Gate threshold voltage V_DS = V_GS, I_D = 50 µA
Static drain-source on-
resistance
V_GS = 10 V, I_D = 1.9 A
50 µA
± 10 µA
3
3.6 4.5 V
1.7
2Ω
solete Table 5. Dynamic
b _Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
) ^{- O C}iss
t(s ^Coss
c ^Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 50 V, f = 1 MHz,
V_GS = 0
560
pF
-
43
- pF
7.5
pF
rodu ^Coss
(1)
eq.
Equivalent output
capacitance
V_DS = 0 to 496 V, V_GS = 0
-
27
- pF
P _RG
Intrinsic gate
resistance
f = 1 MHz open drain
2
5
10 Ω
lete^{Qg Total gate charge}
V_DD = 496 V, I_D = 3.8 A,
o ^Qgs ^{Gate-source charge V}GS ^{= 10 V}
s _{Qgd Gate-drain charge}
(see Figure 16)
23
nC
-
4
- nC
13
nC
Ob ^{1. C}oss eq. ^{is defined as a constant equivalent capacitance giving the same charging time as C}oss ^{when V}DS
increases from 0 to 80% V_DSS
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Table 6. Switching times
Test conditions
V_DD = 300 V, I_D = 1.9 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 15)
Min. Typ. Max. Unit
10
ns
9
ns
-
-
29
ns
19
ns
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