STDLED625 Datasheet, PDF (7/18 Pages) STMicroelectronics – Gate charge minimized

STDLED625, STULED625
Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
AM08247v1
Figure 9. Output capacitance stored energy
Eoss
(µJ)
AM08248v1
1000
4
Ciss
3
100
2
Coss
10
Crss
1
t(s) ¹
0.1
1
10
100 VDS(V)
uc _{Figure 10. Normalized gate threshold voltage vs}
d _temperature
ro _VGS(th)
P _(norm)
te ^1.10
AM08249v1
ole _1.00
0
0 100 200 300 400 500 VDS(V)
Figure 11. Normalized on-resistance vs
temperature
RDS(on)
(norm)
AM08250v1
2.5
2.0
Obs1.5
0.90
) ^- _1.0
t(s 0.80
c 0.5
du _0.70
ro ^{-75 -25}
25
75 125
TJ(°C)
0
-75 -25
25
75 125 TJ(°C)
P _{Figure 12. Source-drain diode forward}
techaracteristics
le_VSD
o_(V)
Obs ^1.0
TJ=-50°C
AM08597v1
Figure 13. Normalized B_VDSS vs temperature
BVDSS
(norm)
AM08596v1
1.10
0.9
0.8
1.05
0.7 ^TJ=25°C
0.6
TJ=150°C
0.5
0.4
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ISD(A)
1.00
0.95
0.90
-75 -25 25
75 125 TJ(°C)
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