STDLED625 Datasheet, PDF (3/18 Pages) STMicroelectronics – Gate charge minimized

STDLED625, STULED625
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V_DS
Drain-source voltage
620
V
V_GS
Gate-source voltage
± 30
V
I_D
Drain current (continuous) at T_C = 25 °C
5.0⁽¹⁾
A
I_D
Drain current (continuous) at T_C = 100 °C
3.5⁽¹⁾
A
I_DM(2)
t(s) ^PTOT
c _IAR
rodu E_AS
P _dv/dt(3)
lete ^di/dt(3)
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Avalanche current, repetitive or not-repetitive (pulse
width limited by T_J max.)
Single pulse avalanche energy
(starting T_J = 25 °C, I_D = I_AR, V_DD = 50 V)
Peak diode recovery voltage slope
Diode reverse recovery current slope
o _VISO
bs _TJ
O _Tstg
Insulation withstand voltage (AC)
Operating junction temperature
Storage temperature
- _{1. Limited only by maximum temperature allowed.}
t(s) ^{2. Pulse width limited by safe operating area.}
c ^{3. I}SD ^{≤ I}D^{, peak V}DS ^{≤ V}(BR)DSS^{, V}DD ^{= 80% V}(BR)DSS^.
20.0⁽¹⁾
70
4.2
120
12
400
- 55 to 150
rodu ^{Table 3. Thermal data}
P _Symbol
Parameter
olete^Rthj-case
s _Rthj-amb
Ob ^Rthj-pcb
Thermal resistance junction-case max.
Thermal resistance junction-amb max.
Thermal resistance junction-pcb max.
IPAK
62.50
Value
1.79
DPAK
50
A
W
A
mJ
V/ns
A/µs
V
°C
Unit
°C/W
°C/W
°C/W
Maximum lead temperature for
T_J
soldering purpose
300
°C/W
DocID025167 Rev 1
3/18