STDLED625 Datasheet, PDF (5/18 Pages) STMicroelectronics – Gate charge minimized

STDLED625, STULED625
Electrical characteristics
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Table 6. Switching times
Test conditions
V_DD = 310 V, I_D = 2.75 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 15)
Min.
-
-
-
-
Typ.
22
12
49
20
Max. Unit
-
ns
-
ns
-
ns
-
ns
) Symbol
Table 7. Source-drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
t(s I_SD
uc ^ISDM(1)
rod ^VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 5.5 A, V_GS = 0
P ^trr
te ^Qrr
le ^IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 5.5 A, di/dt = 100 A/µs
V_DD = 60 V (see Figure 18)
so ^trr
Reverse recovery time
b _{Qrr Reverse recovery charge}
- ^{O I}RR ^{Reverse recovery current}
I_SD = 5.5 A, di/dt = 100 A/µs
V_DD = 60 V, T_j = 150 °C
(see Figure 18)
) _{1. Pulse width limited by safe operating area.}
t(s ^{2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.}
-
5.5 A
27 A
-
1.5 V
- 290
ns
- 1900
nC
- 13.5
A
- 335
ns
- 2400
nC
- 14.5
A
roduc ^{Table 8. Gate-source Zener diode}
P _Symbol
Parameter
Test conditions
lete^V(BR)GSO
Gate-source breakdown
voltage
I_GS = ± 1 mA, I_D = 0
Min. Typ. Max. Unit
30 -
-V
Obso ^{The built-in back-to-back Zener diodes have been specifically designed to enhance not only}
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
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