STDLED625 Datasheet, PDF (4/18 Pages) STMicroelectronics – Gate charge minimized

Electrical characteristics
2
Electrical characteristics
STDLED625, STULED625
(T_case = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On/off states
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source
breakdown voltage
I_D = 1 mA, V_GS = 0
620
V
I_DSS
t(s) ^IGSS
c _VGS(th)
rodu ^RDS(on)
Zero gate voltage
V_DS = 620 V
drain current (V_GS = 0) V_DS = 620 V, T_C = 125 °C
Gate-body leakage
current (V_DS = 0)
V_GS = ± 20 V; V_DS = 0
Gate threshold voltage V_DS = V_GS, I_D = 50 µA
Static drain-source on-
resistance
V_GS = 10 V, I_D = 2.1 A
1 µA
50 µA
±10 µA
3
3.6 4.5 V
1.28 1.6 Ω
lete ^{P Table 5. Dynamic}
o _Symbol
Parameter
Test conditions
Min.
bs _Ciss
- ^{O C}_oss
t(s) ^Crss
Input capacitance
-
Output capacitance _{VDS = 50 V, f = 1 MHz, VGS = 0} -
Reverse transfer
capacitance
-
c _{Equivalent output}
du ^Coss(er)(1) ^{capacitance energy}
-
ro ^related
P ^{Equivalent output}
V_GS = 0, V_DS = 0 to 480 V
C_oss(tr)(2)
capacitance time
-
te _related
sole ^RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
Ob ^Qg
Total gate charge
V_DD = 496 V, I_D = 5.5 A,
-
Typ.
890
110
18
28
63
3.5
35
Max. Unit
- pF
- pF
- pF
- pF
- pF
-
Ω
- nC
Q_gs Gate-source charge V_GS = 10 V
-
4.5
- nC
Q_gd Gate-drain charge
(see Figure 16)
-
23
- nC
1. It is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS.
2. It is defined as a constant equivalent capacitance giving the same storage energy as C_oss when V_DS
increases from 0 to 80% V_DSS.
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