STDLED625 Datasheet, PDF (1/18 Pages) STMicroelectronics – Gate charge minimized

STDLED625,
STULED625
N-channel 620 V, 1.28 Ω typ., 5.0 A Power MOSFET
in DPAK and IPAK
Datasheet − production data
Features
Order codes V_DS
R_DS(on)
max.
I_D
P_TOT
t(s) ³
c ¹
u DPAK
3
2
1
IPAK
lete ^{Prod Figure 1. Internal schematic diagram}
o _D(2,TAB)
t(s) ^{- Obs G(1)}
te ^{Produc S(3)}
Obsole ^AM01476v1
STDLED625
620 V
STULED625
1.6 Ω
25 W
5.0 A
70 W
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitance
• Improved diode reverse recovery
characteristics
• Zener-protected
Applications
• LED lighting applications
Description
These Power MOSFETs boast extremely low on-
resistance and very good dv/dt capability,
rendering them suitable for buck-boost and
flyback topologies.
Order codes
STDLED625
STULED625
Table 1. Device summary
Marking
Package
LED625
DPAK
IPAK
Packaging
Tape and reel
Tube
August 2013
This is information on a product in full production.
DocID025167 Rev 1
1/18
www.st.com
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