STDLED623 Datasheet, PDF (7/18 Pages) STMicroelectronics – Very low intrinsic capacitance

STDLED623, STULED623
Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
AM09188v1
Ciss
100
Figure 9. Output capacitance stored energy
Eoss
(µJ)
AM09189v1
2.5
2.0
1.0
10
Coss
Crss
t(s) ¹
0.1
1
10
100 VDS(V)
uc _{Figure 10. Normalized gate threshold voltage vs}
d _temperature
ro _VGS(th)
P _(norm)
te ^1.10
ID=50µA
AM09190v1
le ^1.05
o _1.00
bs _0.95
O _0.90
) ^- _0.85
t(s ^0.80
c _0.75
du _0.70
ro ^{-75 -25}
25
75
125
TJ(°C)
P _{Figure 12. Source-drain diode forward}
techaracteristics
ole ^{VSD (V)}
s _0.9
Ob ^0.8
T_J=-50°C
AM09193v1
T_J=25°C
0.5
0
0 100 200 300 400 500 600 VDS(V)
Figure 11. Normalized on-resistance vs
temperature
RDS(on)
(norm)
AM09191v1
2.5
ID=1.1A
VGS=10V
2.0
1.5
1.0
0.5
0
-75 -25
25
75 125 TJ(°C)
Figure 13. Maximum avalanche energy vs
temperature
BVDSS
(norm)
1.10
ID=1mA
AM09192v1
0.7
0.6 _TJ=150°C
0.5
1.05
0.4
1.00
0.3
0.2
0.95
0.1
0
0
1
2
3
4
5 ISD(A)
0.90
-75 -25
25
75 125 TJ(°C)
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