STDLED623 Datasheet, PDF (3/18 Pages) STMicroelectronics – Very low intrinsic capacitance

STDLED623, STULED623
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V_DS
Drain-source voltage (V_GS = 0)
620
V
V_GS
Gate-source voltage
± 30
V
I_D
Drain current (continuous) at T_C = 25 °C
3.0
A
I_D
Drain current (continuous) at T_C = 100 °C
3.0
A
I_DM(1)
) _PTOT
ct(s ^IAR
rodu ^EAS
P _dv/dt⁽²⁾
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Avalanche current, repetitive or not-repetitive (pulse width
limited by T_j max.)
Single pulse avalanche energy (starting T_j = 25 °C, I_D =
I_AR, VDD = 50 V)
Peak diode recovery voltage slope
lete ^VISO
bso ^T_stg
O _Tj
Insulation withstand voltage (RMS) from all three leads to
external heat sink
(t = 1 s; T_C = 25 °C)
Storage temperature
Max. operating junction temperature
) ^{- 1. Pulse width limited by safe operating area.}
t(s ^{2. ISD ≤ 2.2 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.}
12
45
0.36
85
12
-55 to 150
150
A
W
W/°C
kV
V/ns
V
°C
°C
uc _{Table 3. Thermal data}
rod _Symbol
Parameter
lete ^{P Rthj-case}
o R_thj-pcb(1)
Thermal resistance junction-case max.
Thermal resistance junction-pcb max.
bs ^R_thj-amb ^{Thermal resistance junction-amb max.}
O _{1. When mounted on 1 inch² FR-4 board, 2 oz Cu.}
Value
DPAK IPAK
2.78 6.25
50
100
Unit
°C/W
°C/W
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Max. value
Unit
I_AR
Avalanche current, repetitive or not-repetitive (pulse width
limited by T_j max.)
2.7
A
Single pulse avalanche energy
E_AS
(starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V)
100
mJ
DocID025178 Rev 1
3/18