STDLED623 Datasheet, PDF (1/18 Pages) STMicroelectronics – Very low intrinsic capacitance

STDLED623,
STULED623
N-channel 620 V, 3.0 Ω typ., 3.0 A Power MOSFET
in DPAK and IPAK packages
Datasheet - production data
Features
TAB
TAB
Order codes V_DS
R_DS(on)
max.
I_D
P_TOT
) ³
t(s ¹
c DPAK
3
2
1
IPAK
te ^{Produ Figure 1. Internal schematic diagram}
le D(2,TAB)
) ^{- Obso} _G(1)
Product(s _S(3)
te ^AM01476v1
STDLED623
620 V
STULED623
< 3.6 Ω
3.0 A 45 W
• 100% avalanche tested
• Extremely high dv/dt capability
• Very low intrinsic capacitance
• Improved diode reverse recovery
characteristics
• Zener-protected
Applications
• LED lighting applications
Description
These Power MOSFETs boast extremely low on-
resistance, superior dynamic performance and
high avalanche capability, making them suitable
for the buck-boost and flyback topology.
Obsole ^{Table 1. Device summary}
Order codes
Marking
Package
Packaging
STDLED623
STULED623
LED623
DPAK
IPAK
Tape and reel
Tube
September 2013
This is information on a product in full production.
DocID025178 Rev 1
1/18
www.st.com
18