STDLED623 Datasheet, PDF (5/18 Pages) STMicroelectronics – Very low intrinsic capacitance

STDLED623, STULED623
Electrical characteristics
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Table 7. Switching times
Test conditions
V_DD = 310 V, I_D =1.1 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 15)
Min.
-
-
-
-
Typ.
8
4.4
21
22
Max. Unit
-
ns
-
ns
-
ns
-
ns
Table 8. Source-drain diode
) ^Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
t(s ^ISD
uc ^ISDM(1)
d _VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 2.2 A, V_GS = 0
ro _trr
te ^{P Qrr}
le ^IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 2.2 A, di/dt = 100 A/µs
V_DD = 60 V (see Figure 20)
o _trr
bs _Qrr
O _IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 2.2 A, di/dt = 100 A/µs
V_DD = 60 V, T_j = 150 °C
(see Figure 20)
) ^- _{1. Pulse width limited by safe operating area.}
t(s ^{2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.}
-
2.2 A
-
8.8 A
-
1.6 V
- 200
ns
- 900
nC
-
9
A
- 240
ns
- 1150
nC
- 10
A
roduc ^{Table 9. Gate-source Zener diode}
P Symbol
Parameter
Test conditions
lete^BVGSO
Gate-source breakdown
voltage
I_GS = ± 1 mA (open drain)
Min. Typ. Max. Unit
30 -
-V
bso _{The built-in back-to-back Zener diodes have specifically been designed to enhance not only}
O _{the device’s ESD capability, but also to make them safely absorb possible voltage transients}
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
DocID025178 Rev 1
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