STD52P3LLH6 Datasheet, PDF (7/16 Pages) STMicroelectronics – Low gate drive power loss

STD52P3LLH6
Electrical characteristics
Figure 8: Capacitance variations
C
GIPG290820141342MT
(pF)
Figure 9: Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
GIPG290820141351MT
4000
3000
1.1
1
Ciss
0.9
ID=250µ A
0.8
2000
0.7
1000
0
0
Coss
Crss
5 10 15 20 25 VDS(V)
0.6
0.5
0.4
-75 -25 25 75 125 175 TJ(°C)
Figure 10: Normalized on-resistance vs
temperature
RDS(on)
(norm)
1.6
VGS=10V
GIPG290820141400MT
1.4
1.2
1
0.8
0.6
0.4
-75 -25
25
75 125 175 TJ(°C)
Figure 11: Normalized V(BR)DSS vs
temperature
V(BR)DSS
(norm)
GIPG290820141412MT
1.08
ID=1m A
1.06
1.04
1.02
1
0.98
0.96
0.94
0.92
-75
-25
25
75 125 175 TJ(°C)
Figure 12: Source-drain diode forward characteristics
DocID025835 Rev 2
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