STD52P3LLH6 Datasheet, PDF (4/16 Pages) STMicroelectronics – Low gate drive power loss

Electrical characteristics
STD52P3LLH6
2
Electrical characteristics
(T_CASE = 25 °C unless otherwise specified)
Table 4: Static
Symbol
Parameter
Test conditions
V(BR)DSS Drain-source breakdown voltage
IDSS Zero gate voltage drain current
ID = 250 µA, VGS = 0
VGS = 0, VDS = 30 V
VGS = 0, VDS = 30 V,
Tc = 125 °C
IGSS
VGS(th)
RDS(on)
Gate body leakage current
Gate threshold voltage
Static drain-source on-resistance
VGS = ± 20 V, VDS = 0
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 26 A
VGS = 4.5 V, ID = 26 A
Min. Typ.
30
1
0.01
0.014
Max.
1
10
±100
2.5
0.012
0.017
Unit
V
µA
µA
nA
V
Ω
Ω
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
Parameter
Table 5: Dynamic
Test conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 15 V, ID = 52 A
VGS = 4.5 V
(see Figure 14: "Gate
charge test circuit" )
Gate input resistance
ID = 0
Gate bias = 0
Test signal level = 20 mV
f = 1MHz
Min.
-
-
-
-
-
-
-
Typ.
3350
414
287
33
14
11
1.5
Max.
-
-
-
-
-
-
Unit
pF
pF
pF
nC
nC
nC
Ω
For the P-channel Power MOSFETs the actual polarity of the voltages and the
current must be reversed.
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