STD52P3LLH6 Datasheet, PDF (5/16 Pages) STMicroelectronics – Low gate drive power loss

STD52P3LLH6
Symbol Parameter
td(on)
Turn-on delay
time
tr
Rise time
td(off)
Turn-off delay
time
tf
Fall time
Electrical characteristics
Table 6: Switching on/off (inductive load)
Test conditions
Min. Typ. Max. Unit
VDD = 24 V, ID = 15 A,
RG = 4.7 Ω, VGS = 10 V
( see Figure 13: "Switching times test
circuit for resistive load")
- 12.8 - ns
- 112 - ns
-
61
- ns
-
45
- ns
Symbol
Parameter
VSD⁽¹⁾
Forward on
voltage
trr
Reverse recovery
time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
Table 7: Source drain diode
Test conditions
ISD = 52 A, VGS = 0
ISD = 52 A,
di/dt = 100 A/µs,
VDD = 24 V
(see Figure 15: "Source-drain diode
forward characteristics")
Notes:
(1)_{Pulsed: pulse duration = 300 µs, duty cycle 1.5%}
Min. Typ. Max. Unit
-
1.1 V
- 25.2
ns
- 17.4
nC
- 1.4
A
For the P-channel Power MOSFETs the actual polarity of the voltages and the
current must be reversed.
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