STD52P3LLH6 Datasheet, PDF (1/16 Pages) STMicroelectronics – Low gate drive power loss

STD52P3LLH6
P-channel 30 V, 0.01 Ω typ., 52 A, STripFET™ H6
Power MOSFET in a DPAK package
Datasheet - preliminary data
Figure 1: Internal schematic diagram
 Very low on-resistance
 Very low gate charge
 High avalanche
 Low gate drive power loss
Applications
 Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ H6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
Table 1: Device summary
Order codes Marking Package Packaging
STD52P3LLH6 52P3LLH6 DPAK
Tape and
reel
For the P-channel Power MOSFETs the
actual polarity of the voltages and the
current must be reversed.
Features
Order codes
STD52P3LLH6
VDSS
30 V
RDS(on) max
0.012 Ω
ID
52 A
PTOT
70 W
September 2014
DocID025835 Rev 2
This is preliminary information on a new product now in development
or undergoing evaluation. Details are subject to change without notice.
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