STD52P3LLH6 Datasheet, PDF (3/16 Pages) STMicroelectronics – Low gate drive power loss

STD52P3LLH6
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VDS
VGS
ID
ID
IDM ⁽¹⁾
PTOT
Tstg
Tj
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Storage temperature
Max. operating junction temperature
Notes:
(1)_{Pulse width limited by safe operating area.}
Symbol
Rthj-case
Table 3: Thermal data
Parameter
Thermal resistance junction-case max
Electrical ratings
Value
Unit
30
V
±20
V
52
A
37.5
A
208
A
70
W
-55 to 175
°C
175
°C
Value
2.14
Unit
°C/W
For the P-channel Power MOSFETs the actual polarity of the voltages and the
current must be reversed.
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