STD30N10F7 Datasheet, PDF (7/16 Pages) STMicroelectronics – High avalanche ruggedness

STD30N10F7
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs
temperature
C
(pF)
1400
1200
1000
800
600
400
AM16178v1
Ciss
VGS(th)
(norm)
1.2
1
0.8
0.6
0.4
ID=250µA
AM16179v1
200
0
0 10 20 30 40 50 60 70 80
Coss
Crss
VDS(V)
0.2
0
-55 -30 -5 20 45 70 95 120 145 TJ(°C)
Figure 10. Normalized on-resistance vs
temperature
Figure 11. Normalized V_(BR)DSS vs temperature
RDS(on)
(norm)
2
VGS=10V
AM16180v1
V(BR)DSS
(norm)
1.04
1.03
ID=250µA
AM16181v1
1.02
1.5
1.01
1
1
0.99
0.5
0
-55 -30 -5 20 45 70 95 120 TJ(°C)
0.98
0.97
0.96
-55 -30 -5
20 45 70 95 120 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
VSD (V)
1
TJ=-55°C
AM16182v1
TJ=25°C
0.9
0.8
0.7
TJ=150°C
0.6
0.5
0
5 10 15 20 25 30 ISD(A)
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