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| STD30N10F7 Datasheet, PDF (4/16 Pages) STMicroelectronics – High avalanche ruggedness | |||
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Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
IDSS
Zero gate voltage
drain current
IGSS
Gate-body leakage
current
VGS = 0, ID = 250 µA
VGS = 0, VDS = 100 V
VGS = 0,
VDS = 100 V, TC=125 °C
VDS = 0, VGS = +20 V
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source
on- resistance
VGS = 10 V, ID = 16 A
STD30N10F7
Min. Typ. Max. Unit
100
V
1 µA
100 µA
100 nA
2.5
4.5 V
0.02 0.024 â¦
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
VDS = 50 V, f = 1 MHz,
VGS = 0
VDD = 50 V, ID = 32 A,
VGS = 10 V
(see Figure 14)
Min.
-
-
-
Typ.
1270
290
24
Max. Unit
-
pF
-
pF
-
pF
-
19
- nC
-
9
- nC
-
4.5
- nC
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
VDD = 50 V, ID = 16 A,
RG = 4.7 â¦, VGS = 10 V
(see Figure 13)
Min. Typ. Max. Unit
-
12
-
ns
-
17.5
-
ns
-
22
-
ns
-
5.6
-
ns
4/16
DocID025607 Rev 3
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