STD30N10F7 Datasheet, PDF (3/16 Pages) STMicroelectronics – High avalanche ruggedness

STD30N10F7
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
V_DS
Drain-source voltage
V_GS
Gate- source voltage
I_D
Drain current (continuous) at T_C = 25 °C
I_D
I_DM(1)
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed) T_C = 25 °C
P_TOT Total dissipation at T_C = 25 °C
T_J
Operating junction temperature range
T_stg
Storage temperature range
1. Pulse width limited by safe operating area.
100
20
32
23
132
50
-55 to 175
Table 3. Thermal data
Symbol
Parameter
R_thj-pcb(1) Thermal resistance junction-pcb max
R_thj-case Thermal resistance junction-case max
1. When mounted on 1 inch² FR-4 board, 2 oz Cu
Value
50
3
Unit
V
V
A
A
A
W
°C
Unit
°C/W
°C/W
DocID025607 Rev 3
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