STD30N10F7 Datasheet, PDF (1/16 Pages) STMicroelectronics – High avalanche ruggedness

STD30N10F7
N-channel 100 V, 0.02 Ω typ., 32 A STripFET™ F7
Power MOSFET in a DPAK package
Datasheet − production data
Features
TAB
3
1
DPAK
Order code V_DS R_DS(on) max I_D P_TOT
STD30N10F7 100 V 0.024 Ω 32 A 50 W
• Among the lowest R_DS(on) on the market
• Excellent figure of merit (FoM)
• Low C_rss/C_iss ratio for EMI immunity
• High avalanche ruggedness
Figure 1. Internal schematic diagram
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Applications
• Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
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Order code
STD30N10F7
Table 1. Device summary
Marking
Package
30N10F7
DPAK
Packing
Tape and reel
January 2016
This is information on a product in full production.
DocID025607 Rev 3
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