STD30N10F7 Datasheet, PDF (5/16 Pages) STMicroelectronics – High avalanche ruggedness

STD30N10F7
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
V_SD ⁽¹⁾ Forward on voltage
I_SD = 32 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 32 A, di/dt = 100 A/µs
V_DD = 80 V, T_J=150 °C
(see Figure 15)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
-
1.1 V
- 41
ns
- 47
nC
- 2.3
A
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