STD2N105K5 Datasheet, PDF (7/21 Pages) STMicroelectronics – Ultra low gate charge

STD2N105K5, STP2N105K5, STU2N105K5
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
VGS
(V)
VDS
12
10
VDD = 840 V
ID = 1.5 A
GIPG210320141105SA
VDS (V)
800
700
600
8
500
6
400
300
4
200
2
100
0
0
0
2
4
6
8
10 Qg(nC)
Figure 9. Static drain-source on-resistance
RDS(on)
(Ω)
VGS= 10V
GIPG210320141116SA
9
8
7
6
5
0
1
2
ID(A)
Figure 10. Capacitance variations
C
(pF)
GIPG210320141129SA
Figure 11. Output capacitance stored energy
E
(µJ)
GIPG210320141201SA
1000
100
2
10
1
0.1
0.1
1
10
100
VDS(V)
Figure 12. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.2
GIPG210320141203SA
ID = 100 μA
1
0.8
0.6
0.4
-100 -50
0 50 100 150 Tj(°C)
0
0 200 400 600 800
VDS(V)
Figure 13. Normalized on-resistance vs
temperature
RDS(on)
(norm)
GIPG210320141419SA
2.5
ID= 0.75A
VGS= 10V
2
1.5
1
0.5
0
-100 -50 0 50 100 150 Tj(°C)
DocID026321 Rev 3
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