STD2N105K5 Datasheet, PDF (4/21 Pages) STMicroelectronics – Ultra low gate charge

Electrical characteristics
STD2N105K5, STP2N105K5, STU2N105K5
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states
Test conditions
V_(BR)DSS
Drain-source breakdown
voltage
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage,
drain current (V_GS = 0)
Gate-body leakage
current
Gate threshold voltage
Static drain-source on-
resistance
I_D = 1 mA, V_GS = 0
V_DS = 1050 V
V_DS = 1050 V, T_C=125 °C
V_GS = ± 20 V; V_DS=0
V_DS = V_GS, I_D = 100 µA
V_GS = 10 V, I_D = 0.75 A
Min. Typ. Max. Unit
1050
V
1 µA
50 µA
±10 µA
3
4
5V
6
8Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
- 115 - pF
V_DS =100 V, f=1 MHz, V_GS=0 ^-
15
-
pF
- 0.5 - pF
C_o(tr)(1)
C_o(er)(2)
Equivalent capacitance time
related
Equivalent capacitance
energy related
V_GS = 0, V_DS = 0 to 840 V
-
17
-
pF
-
6
- pF
R_G Intrinsic gate resistance
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
f = 1 MHz open drain
V_DD = 840 V, I_D = 1.5 A
V_GS =10 V
(see Figure 18)
- 20
-
Ω
-
10
-
nC
- 1.5 - nC
-
8
- nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C_oss when
V_DS increases from 0 to 80% V_DSS
2. energy related is defined as a constant equivalent capacitance giving the same stored energy as C_oss
when V_DS increases from 0 to 80% V_DSS
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