STD2N105K5 Datasheet, PDF (1/21 Pages) STMicroelectronics – Ultra low gate charge

STD2N105K5, STP2N105K5,
STU2N105K5
N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh™ K5
Power MOSFETs in DPAK, TO-220 and IPAK packages
Datasheet - production data
TAB
3
1
DPAK
TAB
TAB
3
2
1
TO-220
3
2
1
IPAK
Figure 1. Internal schematic diagram
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Features
Order codes V_DS R_DS(on) max
STD2N105K5
STP2N105K5 1050 V
8Ω
STU2N105K5
I_D
1.5 A
P_TOT
60 W
• Industry’s lowest R_DS(on) x area
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
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AM01476v1
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order codes
STD2N105K5
STP2N105K5
STU2N105K5
Table 1. Device summary
Marking
Package
DPAK
2N105K5
TO-220
IPAK
Packaging
Tape and reel
Tube
November 2014
This is information on a product in full production.
DocID026321 Rev 3
1/21
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