STD20P3H6AG Datasheet, PDF (7/15 Pages) STMicroelectronics – High avalanche ruggedness

STD20P3H6AG
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs
temperature
Figure 12: Source-drain diode forward characteristics
For the P-channel Power MOSFET, current and voltage polarities are reversed.
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