STD20P3H6AG Datasheet, PDF (1/15 Pages) STMicroelectronics – High avalanche ruggedness

STD20P3H6AG
Automotive-grade P-channel -30 V, 33 mΩ typ., -20 A
STripFET™ F6 Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STD20P3H6AG
VDS
-30 V
RDS(on) max.
50 mΩ
ID
-20 A
 Designed for automotive applications and
AEC-Q101 qualified
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
 Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
S(3)
Order code
STD20P3H6AG
AM11258v1
Table 1: Device summary
Marking
Package
20P3H6
DPAK
Packing
Tape and reel
September 2015
DocID028377 Rev 2
This is information on a product in full production.
1/15
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