STD20P3H6AG Datasheet, PDF (3/15 Pages) STMicroelectronics – High avalanche ruggedness

STD20P3H6AG
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VDS
VGS
ID
IDM⁽¹⁾
PTOT
EAS⁽²⁾
Tstg
Tj
Drain-source voltage
Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
Drain current (continuous) at Tcase = 100 °C
Drain current (pulsed)
Total dissipation at Tcase = 25 °C
Single pulse avalanche energy
Storage temperature
Operating junction temperature
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{starting Tj = 25 °C, RG = 47 Ω, ID(min) = -20 A.}
Symbol
Rthj-case
Rthj-pcb⁽¹⁾
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
Notes:
(1) _{When mounted on a 1-inch² FR-4, 2 Oz copper board}
Electrical ratings
Value
Unit
-30
V
±20 V
V
-20
A
-14
-80
A
40
W
250
mJ
–55 to 175
°C
Value
3.75
50
Unit
°C/W
DocID028377 Rev 2
3/15