STD20P3H6AG Datasheet, PDF (5/15 Pages) STMicroelectronics – High avalanche ruggedness

STD20P3H6AG
Symbol Parameter
ISD
Source-drain
current
ISDM⁽¹⁾
Source-drain
current
(pulsed)
VSD⁽²⁾
Forward on
voltage
trr
Reverse
recovery time
Reverse
Qrr
recovery
charge
Reverse
IRRM recovery
current
Table 7: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
-
-20 A
-
-80 A
VGS = 0 V, ISD = -20 A
ISD = -20 A, di/dt = -100 A/µs, VDD = -24 V
(see Figure 15: "Test circuit for inductive
load switching and diode recovery times")
-
-1.3 V
- 18.4
ns
- 11.2
nC
- -1.2
A
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{Pulse test: pulse duration = 300 µs, duty cycle 1.5%.}
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