STD20P3H6AG Datasheet, PDF (4/15 Pages) STMicroelectronics – High avalanche ruggedness

Electrical characteristics
STD20P3H6AG
2
Electrical characteristics
(T_case = 25 °C unless otherwise specified)
Table 4: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = -250 µA
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-
resistance
VGS = 0 V, VDS = -30 V
VGS = 0 V, VDS = -30 V,
Tcase = 125 °C
VDS = 0 V, VGS = -20 V
VDS = VGS, ID = -250 µA
VGS = -10 V, ID = -10 A
Min. Typ. Max. Unit
-30
V
-1
µA
-10
-100 nA
-2
-4 V
33 50 mΩ
Symbol
Parameter
Ciss Input capacitance
Coss
Output
capacitance
Crss
Reverse transfer
capacitance
Qg Total gate charge
Qgs
Gate-source
charge
Qgd Gate-drain charge
Table 5: Dynamic
Test conditions
VDS = -25 V, f = 1 MHz, VGS = 0 V
VDD = -15 V, ID = -20 A, VGS = -10 V
(see Figure 14: "Gate charge test
circuit")
Min. Typ. Max. Unit
- 635 -
- 155 -
pF
- 100 -
- 12.8 -
- 4.4 - nC
- 3.4 -
Symbol Parameter
td(on)
Turn-on
delay time
tr
Rise time
td(off)
Turn-off
delay time
tf
Fall time
Table 6: Switching times
Test conditions
VDD = -15 V, ID = -10 A RG = 4.7 Ω, VGS = -
10 V (see Figure 13: "Switching times test
circuit for resistive load" )
Min. Typ. Max. Unit
- 9.4 -
- 28.2 -
ns
- 15.8 -
- 6.25 -
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