STD12N65M2 Datasheet, PDF (7/16 Pages) STMicroelectronics – Extremely low gate charge

STD12N65M2
Figure 8: Static drain-source on-resistance
RDS(on)
GIPD161220141813MT
(Ω)
VGS= 10V
0.44
0.43
0.42
0.41
0.40
0
2
4
6
8
ID(A)
Electrical characteristics
Figure 9: Normalized on-resistance vs
temperature
Figure 10: Gate charge vs. gate-source
voltage
VGS
(V)
12
VDS
VDD = 520 V
ID = 8 A
GIPD161220141820MT
V DS (V)
500
10
400
8
300
6
200
4
2
100
0
0
0
4
8
12
16 Qg(nC)
Figure 11: Capacitance variations
C
GIPD161220141823MT
(pF)
1000
Ciss
100
10
1
0.1
0.1
1
Coss
Crss
10
100
VDS(V)
Figure 12: Turn-off switching loss vs drain
current
E
GIPD171220141020MT
(µJ)
4
3
2
1
0
0 100 200 300 400 500 600 VDS(V)
Figure 13: Source-drain diode forward
characteristic
VSD
(V)
GIPD161220141847MT
1.1
Tj= -50°C
1
0.9
Tj= 25°C
0.8
0.7
Tj= 150°C
0.6
0.5
0
2
4
6
8 ISD(A)
DocID027317 Rev 2
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