STD12N65M2 Datasheet, PDF (5/16 Pages) STMicroelectronics – Extremely low gate charge

STD12N65M2
Symbol Parameter
td(on)
Turn-on
delay time
tr
Rise time
td(off)
Turn-off-
delay time
tf
Fall time
Table 7: Switching times
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
-
9
-
ns
VDD = 325 V, ID = 4 A, RG = 4.7 Ω, VGS = 10 V
(see Figure 14: "Switching times test circuit
-
7
-
ns
for resistive load" and Figure 19: "Switching
time waveform")
-
34
-
ns
- 13.5 -
ns
Symbol Parameter
ISD
Source-drain
current
ISDM⁽¹⁾
Source-drain
current
(pulsed)
VSD ⁽²⁾
Forward on
voltage
trr
Reverse
recovery time
Reverse
Qrr
recovery
charge
Reverse
IRRM recovery
current
trr
Reverse
recovery time
Reverse
Qrr
recovery
charge
Reverse
IRRM recovery
current
Table 8: Source drain diode
Test conditions
VGS = 0 V, ISD = 8 A
ISD = 8 A, di/dt = 100 A/µs, VDD = 60 V
(see Figure 16: " Test circuit for inductive
load switching and diode recovery times")
ISD = 8 A, di/dt = 100 A/µs, VDD = 60 V,
Tj = 150 °C (see Figure 16: " Test circuit
for inductive load switching and diode
recovery times")
Min. Typ. Max. Unit
-
8
A
-
32 A
-
1.6 V
- 313
ns
- 2.7
µC
- 17
A
- 462
ns
- 4.1
µC
- 17.5
A
Notes:
(1)_{Pulse width is limited by safe operating area}
(2)_{Pulsed: pulse duration = 300 µs, duty cycle 1.5%}
DocID027317 Rev 2
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