STD12N65M2 Datasheet, PDF (4/16 Pages) STMicroelectronics – Extremely low gate charge

Electrical characteristics
STD12N65M2
2
Electrical characteristics
T_C = 25 °C unless otherwise specified
Table 5: On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-
resistance
V GS= 0 V, VDS = 650 V
VGS = 0 V, VGSDS = 650 V
TC = 125 °C
VDS = 0 V, VGS = ±25 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4 A
Min. Typ. Max. Unit
650
V
1 µA
100 µA
±10 µA
2
3
4
V
0.42 0.5 Ω
Symbol
Parameter
Ciss Input capacitance
Coss Output capacitance
Crss
Reverse transfer
capacitance
Coss
(1)
eq.
Equivalent output
capacitance
RG Intrinsic gate resistance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Table 6: Dynamic
Test conditions
VGS = 0 V, VDS= 100 V,
f = 1 MHz
VGS = 0 V, VDS = 0 to 520 V
f = 1 MHz, open drain
VDD = 520 V, ID = 8 A,
VGS = 10 V (see Figure 15:
"Gate charge test circuit")
Min. Typ. Max. Unit
- 535 - pF
-
25
-
pF
- 1.1 - pF
-
144 - pF
-
7
-
Ω
- 16.5 - nC
- 2.6 - nC
- 8.5 - nC
Notes:
(1)_{Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS
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DocID027317 Rev 2