STD12N65M2 Datasheet, PDF (1/16 Pages) STMicroelectronics – Extremely low gate charge

STD12N65M2
N-channel 650 V, 0.42 Ω typ., 8 A MDmesh M2
Power MOSFET in a DPAK package
Datasheet - production data
DPAK (TO-252)
Figure 1: Internal schematic diagram
Features
Order code
STD12N65M2
VDS
650 V
RDS(on)max.
ID
0.5 Ω
8A
 Extremely low gate charge
 Excellent output capacitance (C_OSS) profile
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Table 1: Device summary
Order code Marking Package Packing
STD12N65M2 12N65M2 DPAK
Tape and
reel
February 2015
DocID027317 Rev 2
This is information on a product in full production.
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