STD12N65M2 Datasheet, PDF (3/16 Pages) STMicroelectronics – Extremely low gate charge

STD12N65M2
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VGS
ID
ID
IDM⁽¹⁾
PTOT
dv/dt⁽²⁾
dv/dt⁽³⁾
Tstg
Tj
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature
Operating junction temperature
± 25
8
5
32
85
15
50
- 55 to 150
V
A
A
A
W
V/ns
V/ns
°C
Notes:
(1)_{Pulse width limited by safe operating area.}
(2)_{ISD ≤ 8 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V.}
(3)_{VDS ≤ 520 V}
Symbol
Rthj-case
Rthj-pcb
Table 3: Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-pcb max⁽¹⁾
Notes:
(1)_{When mounted on 1 inch² FR-4, 2 Oz copper board.}
Value
1.47
50
Unit
°C/W
°C/W
Symbol
Table 4: Avalanche characteristics
Parameter
IAR
Avalanche current, repetetive or not repetetive (pulse width limited by
Tjmax)
EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V)
Value Unit
1.6 A
250 mJ
DocID027317 Rev 2
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