STB50N25M5 Datasheet, PDF (7/14 Pages) STMicroelectronics – N-channel 250 V, 0.065 Ω, 28 A, MDmesh V Power MOSFET in DPAK package

STB50N25M5
Electrical characteristics
Figure 8. Output capacitance stored energy Figure 9. Capacitance variations
Eoss
(µJ)
AM04951v1
C
(pF)
2.5
1000
2.0
AM03973v1
Ciss
1.5
100
Coss
1.0
10
Crss
0.5
0
0 50 100 150 200 250 VDS(V)
1
0.1
1
10
100 VDS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Normalized on-resistance vs
temperature
VGS
(V)
12
10 ^VDS
VDD=200V
ID=28A
AM03974v1
VGS
RDS(on)
(norm)
2.1
1.7
ID=14A
VGS=10V
AM03976v1
8
6
1.3
4
0.9
2
0
0 10 20 30 40 50 Qg(nC)
0.5
-50 -25 0 25 50 75 100 TJ(°C)
Figure 12. Normalized gate threshold voltage Figure 13. Source-drain diode forward
vs temperature
characteristics
VGS(th)
(norm)
1.10
ID=100µA
AM03975v1
VSD
(V)
TJ=-50°C
1.2
AM03978v1
1.0
1.00
0.8
0.90
0.80
0.70
-50 -25 0 25 50 75 100 TJ(°C)
0.6
TJ=150°C
0.4
0.2
0
0 10 20
TJ=25°C
30 40 50 ISD(A)
Doc ID 15923 Rev 3
7/14