STB50N25M5 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 250 V, 0.065 Ω, 28 A, MDmesh V Power MOSFET in DPAK package

STB50N25M5
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Electrical characteristics
Test conditions
V_DD = 125 V, I_D = 14 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 14)
Min. Typ. Max Unit
16
44
-
35
20
ns
ns
-
ns
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 28 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 28 A, di/dt = 100 A/µs
V_DD= 60 V, T_J = 25 °C
(see Figure 16)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 28 A, di/dt = 100 A/µs
V_DD= 60 V T_J = 150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max Unit
28 A
-
112 A
-
1.6 V
174
ns
- 1.5
µC
18
A
195
ns
-2
µC
20
A
Doc ID 15923 Rev 3
5/14