STB50N25M5 Datasheet, PDF (4/14 Pages) STMicroelectronics – N-channel 250 V, 0.065 Ω, 28 A, MDmesh V Power MOSFET in DPAK package

Electrical characteristics
2
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V_(BR)DSS
Drain-source
breakdown voltage
I_D = 1 mA, V_GS = 0
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
V_DS = 250 V
drain current (V_GS = 0) V_DS = 250 V, T_C=125 °C
Gate-body leakage
current (V_DS = 0)
V_GS = ± 25 V
Gate threshold voltage V_DS = V_GS, I_D = 100 µA
Static drain-source on-
resistance
V_GS = 10 V, I_D = 14 A
STB50N25M5
Min. Typ. Max. Unit
250
V
1 µA
100 µA
±100 nA
3
4
5
V
0.065 0.075 Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 50 V, f = 1 MHz,
V_GS = 0
1700
pF
-
100
- pF
15
pF
C_o(er)(1)
Equivalent output
capacitance energy
related
V_GS = 0, V_DS = 0 to 80%
V_(BR)DSS
-
89
- pF
C_o(tr)(2)
Equivalent output
capacitance time
related
V_GS = 0, V_DS = 0 to 80%
V_(BR)DSS
-
171
- pF
R_g
Gate input resistance f=1 MHz open drain
-
1.8
-
Ω
Q_g
Total gate charge
V_DD = 200 V, I_D = 28 A,
Q_gs Gate-source charge V_GS = 10 V
Q_gd Gate-drain charge
(see Figure 15)
44
nC
-
10
- nC
23
nC
1. C_o(er) is a constant capacitance value that gives the same stored energy as C_oss while V_DS is rising from 0
to 80% V_DSS
2. C_o(tr) is a constant capacitance value that gives the same charging time as C_oss while V_DS is rising from 0
to 80% V_DSS
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Doc ID 15923 Rev 3