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STB50N25M5 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 250 V, 0.065 Ω, 28 A, MDmesh V Power MOSFET in DPAK package
STB50N25M5
N-channel 250 V, 0.065 Ω, 28 A, MDmesh™ V Power MOSFET
in D²PAK package
Datasheet — production data
Features
Type
STB50N25M5
VDSS
250 V
RDS(on)
max
< 0.075 Ω
ID
28 A
■ Amongst the best RDS(on)* area
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
TAB
3
1
D²PAK
Application
■ Switching applications
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Figure 1. Internal schematic diagram
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3
!-V
Table 1. Device summary
Order code
STB50N25M5
Marking
50N25M5
Package
D²PAK
Packaging
Tape and reel
March 2012
This is information on a product in full production.
Doc ID 15923 Rev 3
1/14
www.st.com
14