STB50N25M5 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-channel 250 V, 0.065 Ω, 28 A, MDmesh V Power MOSFET in DPAK package

STB50N25M5
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
I_AR
E_AS
dv/dt⁽²⁾
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Avalanche current, repetitive or not-repetitive
(pulse width limited by T_J max)
Single pulse avalanche energy
(starting T_J = 25 °C, I_D = I_AR, V_DD = 50 V)
Peak diode recovery voltage slope
T_J Operating junction temperature
T_stg Storage temperature
1. Pulse width limited by safe operating area
2. I_SD ≤ 28 A, di/dt ≤ 400 A/µs, V_Peak < V_(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb Thermal resistance junction-pcb max
Electrical ratings
Value
±25
28
18
112
110
9
350
15
-55 to 150
Unit
V
A
A
A
W
A
mJ
V/ns
°C
Value
0.31
30
Unit
°C/W
°C/W
Doc ID 15923 Rev 3
3/14