STB24N65M2 Datasheet, PDF (7/20 Pages) STMicroelectronics – Extremely low gate charge

STB24N65M2, STF24N65M2, STP24N65M2
Figure 8: Gate charge vs gate-source voltage
VGS
(V)
12
VDS
VDD = 520 V
ID = 16 A
GIPD041020141607FSR
V DS (V)
600
10
500
8
400
6
300
4
200
2
100
0
0
0 5 10 15 20 25 30 Qg(nC)
Electrical characteristics
Figure 9: Static drain-source on-resistance
RDS(on)
GIPD180920141613FSR
(Ω)
VGS= 10V
0.196
0.193
0.190
0.187
0.184
0.181
0.178
0.175
0
4
8
12
16 ID(A)
Figure 10: Capacitance variations
C
GIPD041020141619FSR
(pF)
Figure 11: Normalized gate threshold voltage
vs temperature
1000
Ciss
100
10
f= 1 MHz
1
Coss
Crss
0.1
0.1
1
10
100
VDS(V)
Figure 12: Normalized on-resistance
RDS(on)
GIPD180920141459FSR
(norm)
2.2
VGS= 10V
1.8
1.4
1
0.6
0.2
-75
-25
25
75
125 Tj(°C)
Figure 13: Normalized V(BR)DSS vs
temperature
DocID026475 Rev 2
7/20