STB24N65M2 Datasheet, PDF (1/20 Pages) STMicroelectronics – Extremely low gate charge

STB24N65M2, STF24N65M2,
STP24N65M2
N-channel 650 V, 0.185 Ω typ., 16 A MDmesh M2
Power MOSFET in D2PAK, TO-220FP and TO-220 packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order codes
STB24N65M2
STF24N65M2
STP24N65M2
VDS
650 V
RDS(on) max
0.23 Ω
ID
16 A
 Extremely low gate charge
 Excellent output capacitance (Coss) profile
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.
Table 1: Device summary
Order codes Marking Package Packaging
STB24N65M2
STF24N65M2
STP24N65M2
24N65M2
D²PAK
TO-220FP
TO-220
Tape and
reel
Tube
November 2014
DocID026475 Rev 2
This is information on a product in full production.
1/20
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