STB24N65M2 Datasheet, PDF (5/20 Pages) STMicroelectronics – Extremely low gate charge

STB24N65M2, STF24N65M2, STP24N65M2
Table 8: Source drain diode
Symbol
Parameter
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM⁽¹⁾
VSD⁽²⁾
trr
Qrr
IRRM
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 16 A, VGS = 0
ISD = 16 A, di/dt = 100 A/µs
VDD = 60 V
ISD = 16 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
-
16 A
-
64 A
-
1.6 V
- 350
ns
- 4.5
µC
- 26
A
- 496
ns
- 6.5
µC
- 25.5
A
Notes:
(1)_{Pulse width limited by safe operating area.}
(2)_{Pulsed: pulse duration = 300 µs, duty cycle 1.5%}
DocID026475 Rev 2
5/20