STB24N65M2 Datasheet, PDF (3/20 Pages) STMicroelectronics – Extremely low gate charge

STB24N65M2, STF24N65M2, STP24N65M2
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Value
Parameter
D²PAK
TO-220
Unit
TO-220FP
VGS
ID
ID
IDM ⁽²⁾
PTOT
dv/dt ⁽³⁾
dv/dt ⁽⁴⁾
VISO
Tstg
Tj
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; TC = 25 °C)
Storage temperature
Max. operating junction temperature
± 25
16
16 ⁽¹⁾
10
10 ⁽¹⁾
64
64 ⁽¹⁾
150
30
15
50
2500
- 55 to 150
V
A
A
A
W
V/ns
V/ns
V
°C
Notes:
(1)_{Limited by maximum junction temperature.}
(2)_{Pulse width limited by safe operating area.}
(3)_{ISD ≤ 16 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 80% V(BR)DSS.}
(4)_{VDS ≤ 520 V}
Symbol
Rthj-case
Rthj-pcb
Rthj-amb
Table 3: Thermal data
Parameter
D²PAK
Value
TO-220 TO-220FP
Thermal resistance junction-case max
0.83
4.2
Thermal resistance junction-pcb max ⁽¹⁾
30
Thermal resistance junction-ambient max
62.5
Unit
°C/W
°C/W
°C/W
Notes:
(1)_{When mounted on 1 inch² FR-4, 2 Oz copper board.}
Symbol
Table 4: Avalanche characteristics
Parameter
IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50V)
Value Unit
2.2 A
650 mJ
DocID026475 Rev 2
3/20